unisonic technologies co., ltd 10N65K-MT power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r502-b24.d 10a, 650v n-channel power mosfet ? description the utc 10N65K-MT is an n-channel power mosfet using utc?s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. the utc 10N65K-MT is generally applied in high efficient dc to dc converters, pwm motor controls and bridge circuits, etc. ? features * r ds(on) < 1.0 ? @ v gs =10v, i d = 5 a * high switching speed * improved dv/dt capability ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 10n65kl-ta3-t 10n65kg-ta3-t to-220 g d s tube 10n65kl-tf3-t 10n65kg-tf3-t to-220f g d s tube 10n65kl-tf1-t 10n65kg-tf1-t to-220f1 g d s tube 10n65kl-tf2-t 10n65kg-tf2-t to-220f2 g d s tube 10n65kl-tf3t-t 10n65kg-tf3t-t to-220f3 g d s tube note: pin assignment: g: gate d: drain s: source ? marking
10N65K-MT power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-b24.d ? absolute maximum ratings (t c = 25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 10 a continuous i d 10 a drain current pulsed (note 2) i dm 38 a avalanche energy single pulsed (note 3) e as 400 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220 156 w to-220f/to-220f1 to-220f3 50 w power dissipation to-220f2 p d 48 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature. 3. l=8mh, i as =10a, v dd =50v, r g =25 ? , starting t j = 25c 4. i sd 9.5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w to-220 0.8 c/w to-220f/to-220f1 to-220f3 2.5 c/w junction to case to-220f2 jc 2.6 c/w
10N65K-MT power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-b24.d ? electrical characteristics ( t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 650 v drain-source leakage current i dss v ds = 650v, v gs = 0v 1 a forward v gs = 30 v, v ds = 0 v 100 na gate-source leakage current reverse i gss v gs = -30 v, v ds = 0 v -100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs = 10v, i d = 5a 1.0 ? dynamic characteristics input capacitance c iss 750 1500 pf output capacitance c oss 130 180 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0 mhz 9 20 pf switching characteristics turn-on delay time t d(on) 65 80 ns turn-on rise time t r 80 150 ns turn-off delay time t d(off) 200 260 ns turn-off fall time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 90 150 ns total gate charge q g 30 50 nc gate-source charge q gs 9 nc gate-drain charge q gd v ds =50v, i d =1.3a, v gs =10 v (note 1, 2) 8 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s =10a 1.4 v maximum continuous drain-source diode forward current i s 10 a maximum pulsed drain-source diode forward current i sm 38 a note: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature.
10N65K-MT power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-b24.d ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
10N65K-MT power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-b24.d ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
10N65K-MT power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-b24.d ? typical characteristics drain current, i d (a) drain current, i d (a) drain current, i d (a) continuous drain-source diode forward current, i s (a) utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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